Silicon
Not to be confused with Silicone.
Silicon (Latin: silicium) is the chemical element in the periodic
table that has the symbol Si and atomic number 14. A tetravalent
metalloid, silicon is less reactive than its chemical analog carbon. It is
the second most abundant element in the Earth's crust, making up 25.7% of
it by mass. It does not occur free in nature. It mainly occurs in minerals
consisting of (practically) pure silicon dioxide in different crystalline
forms (quartz, chalcedony, opal) and as silicates (various minerals
containing silicon, oxygen and one or another metal), for example
feldspar. These minerals occur in clay, sand and various types of rock
like granite and sandstone. Silicon is the principal component of most
semiconductor devices and, in the form of silica and silicates, in glass,
cement, and ceramics. It is also a component of silicones, a name for
various plastic substances often confused with silicon itself. Silicon is
widely used in semiconductors because it remains a semiconductor at higher
temperatures than the semiconductor Germanium and because its native oxide
is easily grown in a furnace and forms a better semiconductor/dielectric
interface than almost all other material combinations.
Notable characteristics
In its crystalline form, silicon has a dark gray color
and a metallic luster. It is similar to glass in that it is rather strong,
very brittle, and prone to chipping. Even though it is a relatively inert
element, silicon still reacts with halogens and dilute alkalis, but most
acids (except for a combination of nitric acid and hydrofluoric acid) do
not affect it. Elemental silicon transmits more than 95% of all
wavelengths of infrared light. Pure silicon has a negative temperature
co-efficient of resistance, since the number of free charge carriers
increases with temperature. The electrical resistance of single crystal
silicon significantly changes under the application of mechanical stress
due to the piezoresistive effect.
Applications
Silicon is a very useful element.
Silicon and alloys
The largest application of pure silicon (metallurgical grade silicon) is
in aluminum - silicon alloys, often called "light alloys", to produce cast
parts, mainly for automotive industry (this represents about 55 % of the
world consumption of pure silicon).
The second largest application of pure silicon is as a raw material in the
production of silicones (about 40 % of the world consumption of silicon)
Pure silicon is also used to produce ultrapure silicon for electronic and
photovoltaic applications:
| |
Semiconductor -
Ultrapure silicon can be doped with other elements to adjust its
electrical response by controlling the number and charge (positive
or negative) of current carriers. Such control is necessary for
transistors, solar cells, semiconductor detectors and other
semiconductor devices which are used in electronics and other
high-tech applications.
Photonics - Silicon can be used as a continuous wave
raman laser to
produce coherent light with a wavelength of 1,698 nm.
LCDs and solar cells - Hydrogenated amorphous silicon is
widely used
in the production of low-cost, large-area electronics in
applications such
as LCDs. It has also shown promise for large-area, low-cost solar
cells.
Steel and cast iron - Silicon is an important constituent
of some steels, and it is used in the production process of cast
iron. It is introduced as ferro-silicon or silico-calcium alloys. |
History
Silicon (Latin silex, silicis, meaning flint) was first
identified by Antoine Lavoisier in 1787, and was later mistaken by Humphry
Davy, in 1800, for a compound. In 1811 Gay-Lussac and Thénard probably
prepared impure amorphous silicon through the heating of potassium with
silicon tetrafluoride. In 1824 Berzelius prepared amorphous silicon using
approximately the same method as Lussac. Berzelius also purified the
product by repeatedly washing it.
Because silicon is an important element in semiconductor and high-tech
devices, the high-tech region of Silicon Valley, California, is named
after this element.
Occurrence
Measured by weight, silicon makes up 25.7% of the Earth's crust and is the
second most abundant element on Earth, after oxygen. Pure silicon crystals
are rarely found in nature; natural silicon is usually found in the form
of silicon dioxide (also known as silica) and silicate. It is estimated to
be the seventh most plentiful element in the universe.
Sand, amethyst, agate, quartz, rock crystal, flint, jasper, and opal are
some of the forms in which silicon dioxide appears (they are known as "lithogenic",
as opposed to "biogenic", silicas). Granite, asbestos, feldspar, clay,
hornblende, and mica are a few of the many silicate minerals. Pure silicon
crystals can be found as inclusions with gold and in volcanic exhalations.
Silicon is a principal component of aerolites, which are a class of
meteoroids, and also of tektites, which are a natural form of glass.
Production
Silicon is commercially prepared by the reaction of high-purity silica
with wood, charcoal, and coal, in an electric arc furnace using carbon
electrodes. At temperatures over 1900 °C, the carbon reduces the silica to
silicon according to the chemical equation
SiO2 + C → Si + CO2
Liquid silicon collects in the bottom of the furnace, and is then drained
and cooled. The silicon produced via this process is called metallurgical
grade silicon and is at least 99% pure. Using this method, silicon
carbide, SiC, can form. However, provided the amount of SiO2 is kept high,
silicon carbide may be eliminated, as explained by this equation:
2 SiC + SiO2 → 3 Si + 2 CO
Purification
The use of silicon in semiconductor devices demands a much greater purity
than afforded by metallurgical grade silicon. Historically, a number of
methods have been used to produce high-purity silicon.
Chemical methods
Today, silicon is instead purified by converting it to a silicon compound
that can be more easily purified than silicon itself, and then converting
that silicon element back into pure silicon. Trichlorosilane is the
silicon compound most commonly used as the intermediate, although silicon
tetrachloride and silane are also used. When these gases are blown over
silicon at high temperature, they decompose to high-purity silicon.
In the Siemens process, high-purity silicon rods are exposed to
trichlorosilane at 1150 °C. The trichlorosilane gas decomposes and
deposits additional silicon onto the rods, enlarging them according to
chemical reactions like
2 HSiCl3 → Si + 2 HCl + SiCl4
Silicon produced from this and similar processes is called polycrystalline
silicon. Polycrystalline silicon typically has impurity levels of 1 part
per billion or less.
At one time, DuPont produced ultrapure silicon by reacting silicon
tetrachloride with high-purity zinc vapors at 950 °C, producing silicon
according to the chemical equation
SiCl4 + 2 Zn → Si + 2 ZnCl2
However, this technique was plagued with practical problems (such as the
zinc chloride byproduct solidifying and clogging lines) and was eventually
abandoned in favor of the Siemens process.
Crystallization
The majority of silicon crystals grown for device production are produced
by the Czochralski process, since it is the cheapest method available.
However, silicon single-crystals grown by the Czochralski method contain
impurities since the crucible which contains the melt dissolves. For
certain electronic devices, particularly those required for high power
applications, silicon grown by the Czochralski method is not pure enough.
For these applications, float-zone silicon (FZ-Si) can be used instead.
Isotopes
Silicon has numerous known isotopes, with mass numbers ranging
from 22 to 44. 28Si (the most abundant isotope, at 92.23%), 29Si (4.67%),
and 30Si (3.1%) are stable; 32Si is a radioactive isotope produced by
argon decay. Its half-life, has been determined to be approximately 132
years, and it decays by beta emission to 32P (which has a 14.28 day
half-life) and then to 32S.
|
General |
|
|
Name, Symbol, Number |
silicon, Si, 14 |
|
Chemical series |
metalloids |
|
Group, Period, Block |
14, 3, p |
|
Appearance |
dark gray, bluish tinge |
|
Atomic mass |
28.0855(3) g/mol |
|
Electron configuration |
[Ne] 3s2 3p2 |
|
Electrons per shell |
2, 8, 4 |
|
Physical properties |
|
|
Phase |
solid |
|
Density (near r.t.) |
2.33 g·cm−3 |
|
Liquid density at m.p. |
2.57 g·cm−3 |
|
Melting point |
(1414 °C, |
|
Boiling point |
3265 °C, |
|
Heat of fusion |
50.21 kJ·mol−1 |
|
Heat of vaporization |
359 kJ·mol−1 |
|
Heat capacity |
(25 °C) 19.789 J·mol−1·K−1 |
|
Atomic properties |
|
|
Crystal structure |
Diamond Lattice |
|
Oxidation states |
4 (amphoteric oxide) |
|
Electronegativity |
1.90 (Pauling scale) |
|
Ionization energies
(more) |
1st: 786.5 kJ·mol−1 |
|
2nd: 1577.1 kJ·mol−1 |
|
3rd: 3231.6 kJ·mol−1 |
|
Atomic radius |
110 pm |
|
Atomic radius (calc.) |
111 pm |
|
Covalent radius |
111 pm |
|
Van der Waals radius |
210 pm |
|
Miscellaneous |
|
|
Magnetic ordering |
nonmagnetic |
|
Thermal conductivity |
(300 K) 149 W·m−1·K−1 |
|
Thermal expansion |
(25 °C) 2.6 µm·m−1·K−1 |
|
Speed of sound (thin rod) |
(20 °C) 8433 m/s |
|
Young's modulus |
47 GPa |
|
Bulk modulus |
100 GPa |
|
Mohs hardness |
6.5 |
|
CAS registry number |
7440-21-3 |
|
|
|
|